区永曦博士本科毕业于北京大学物理学院（2008-2012），博士毕业于美国康奈尔大学（Cornell University）物理系（2012-2018），师从美国艺术与科学院院士Robert A. Buhrman教授。之后在美国宾夕法尼亚州立大学（Penn State University）物理系从事博士后（2019-2021）及研究助理教授工作（2021-2024），并于2025年归国加入yd2333云顶电子游戏。区永曦博士的研究领域主要在自旋电子学、凝聚态实验物理学及量子拓扑和低维材料等先进材料的外延生长，特别对自旋轨道矩材料生长表征与自旋器件制备测量有多年研究经验，目前累计发表期刊论文21篇，其中以第一作者身份参与的著作见于Nature Communications、Physical Review Letters 、Physical Review B、Physical Review Applied、Nano Letters、Applied Physics Letters 等国际著名学术期刊，论文总引用数达1400余次，同时参与编写了国际著名出版社Elsevier Science 出版的学术参考书章节。区永曦博士亦有多次出席重要国际学术会议报告的经历，并曾赴美国物理学会三月会议（APS March Meeting）及日本东北大学学术会议作邀请报告，也曾担任2022国际磁学与磁性材料会议（Magnetism and Magnetic Materials Conference) 专题会议主持。区永曦博士目前亦同时担任Physical Review Letters, Physical Review B, Physical Review  Applied, Advanced Materials, Nano Letters、Applied Physics Letters 等国际学术期刊的审稿人。

代表性论文及著作：

Book Chapter “Growth of 2D semiconductors and topological insulators”, Comprehensive Semiconductor Science and Technology, second edition, Elsevier Science.

1. Yongxi Ou, Wilson Yanez, Yu-Sheng Huang, Supriya Ghosh, Cuneyt Sahin, Max Stanley, Sandra Santhosh, Saurav Islam, Anthony Richardella, Andre Mkhoyan, Michael Flatté, Nitin Samarth, “Spin Hall conductivity in Bi1-xSbx as an experimental test of bulk-boundary correspondence”, Nano Letters 25, 21, 8775 (2025).

2. Yongxi Ou, Wilson Yanez, Run Xiao, Max Stanley, Supriya Ghosh, Boyang Zheng, Wei Jiang, Yu-Sheng Huang, Timothy Pillsbury, Anthony Richardella, Chaoxing Liu, Tony Low, Vincent H Crespi, Andre Mkhoyan, Nitin Samarth, “ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics”, Nature Communications 13, 2972 (2022).

3. Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D.C. Ralph, D. A. Muller, D. G. Schlom and R. A. Buhrman, “Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3”, Nano Letters 19, 6, 3663 (2019).

4. Yongxi Ou, Daniel C. Ralph and Robert A. Buhrman, “Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1− x Alloys”, Physical Review Letters 120, 097203 (2018).

5. Shengjie Shi*, Yongxi Ou*, Daniel C. Ralph and Robert A. Buhrman, “Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces”, Physical Review Applied 9, 011002 (2018) (Letter).

6. Yongxi Ou, Daniel C. Ralph and Robert A. Buhrman, “Strong perpendicular magnetic anisotropy energy density at Fe alloy/HfO2 interfaces”, Applied Physics Letters 110, 192403 (2017).

7. Yongxi Ou, Chi-Feng Pai, Shengjie Shi, Daniel C. Ralph and Robert A. Buhrman, “Origin of fieldlike spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures”, Physical Review B 94, 140414(R) (2016) (Rapid communication).

8. Yongxi Ou, Shengjie Shi, Daniel C. Ralph and Robert A. Buhrman, “Strong Spin Hall Effect in the Antiferromagnet PtMn”, Physical Review B 93, 220405(R) (2016) (Rapid communication).

9. Chi-Feng Pai*, Yongxi Ou*, Luis Henrique Vilela-Leão, Daniel C. Ralph and Robert A. Buhrman, “Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt/Ferromagnetic Layer Interfaces”, Physical Review B 92, 064426 (2015).